IGBT transistor with auxiliary emitterControlling a current with another - home-made alternatives to the...
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IGBT transistor with auxiliary emitter
Controlling a current with another - home-made alternatives to the transistor?Current source with IGBTSynchronous rectification in IGBTHigh side IGBT for negative voltagesUsing a PNP transistor as a switch connected from a 74154 then out to stepper motorsTransistor use - Basic fan speed controllerHigh side N channel gate driverIc-Vge IGBT CurveBipolar transistor. Unknown graphsWhat causes random ringing in my inverter?
$begingroup$
Recently I discovered, that some IGBT transistors in IGBT modules have the second pin for an emitter, called auxiliary emitter.
In the picture above 2nd and 4th pins are auxiliary emitters. This is from the datasheet to FS100R17N3E4 module.
However, I did not find any information about what are these pins used for, except that IGBT gate driver is connected to both 1-2 and 3-4 pins, but I do not understand why.
Could someone please recommend any literature on this problem? I would like to have a strong understanding of IGBT transistors and their drivers.
Is there any difference between 2nd and 27, 28, 29 pins, since they are at the same potential?
transistors bjt power-electronics gate-driving igbt
asked 56 mins ago
litviniklitvinik
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
$endgroup$
add a comment |
$begingroup$
Recently I discovered, that some IGBT transistors in IGBT modules have the second pin for an emitter, called auxiliary emitter.
In the picture above 2nd and 4th pins are auxiliary emitters. This is from the datasheet to FS100R17N3E4 module.
However, I did not find any information about what are these pins used for, except that IGBT gate driver is connected to both 1-2 and 3-4 pins, but I do not understand why.
Could someone please recommend any literature on this problem? I would like to have a strong understanding of IGBT transistors and their drivers.
Is there any difference between 2nd and 27, 28, 29 pins, since they are at the same potential?
transistors bjt power-electronics gate-driving igbt
asked 56 mins ago
litviniklitvinik
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
$endgroup$
add a comment |
$begingroup$
Recently I discovered, that some IGBT transistors in IGBT modules have the second pin for an emitter, called auxiliary emitter.
In the picture above 2nd and 4th pins are auxiliary emitters. This is from the datasheet to FS100R17N3E4 module.
However, I did not find any information about what are these pins used for, except that IGBT gate driver is connected to both 1-2 and 3-4 pins, but I do not understand why.
Could someone please recommend any literature on this problem? I would like to have a strong understanding of IGBT transistors and their drivers.
Is there any difference between 2nd and 27, 28, 29 pins, since they are at the same potential?
transistors bjt power-electronics gate-driving igbt
asked 56 mins ago
litviniklitvinik
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
$endgroup$
Recently I discovered, that some IGBT transistors in IGBT modules have the second pin for an emitter, called auxiliary emitter.
In the picture above 2nd and 4th pins are auxiliary emitters. This is from the datasheet to FS100R17N3E4 module.
However, I did not find any information about what are these pins used for, except that IGBT gate driver is connected to both 1-2 and 3-4 pins, but I do not understand why.
Could someone please recommend any literature on this problem? I would like to have a strong understanding of IGBT transistors and their drivers.
Is there any difference between 2nd and 27, 28, 29 pins, since they are at the same potential?
transistors bjt power-electronics gate-driving igbt
transistors bjt power-electronics gate-driving igbt
asked 56 mins ago
litviniklitvinik
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
asked 56 mins ago
litviniklitvinik
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
asked 56 mins ago
litviniklitvinik
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
asked 56 mins ago
litviniklitvinik
585
asked 56 mins ago
litviniklitvinik
585
585
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
New contributor
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
litvinik is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
add a comment |
add a comment |
2 Answers
2
active
oldest
votes
$begingroup$
To measure the voltage at the junction without the lead voltage drop.
This is used so that the gate voltage can better be controlled.
Since IGB can have pretty high current, even a small lead resistance can cause significant voltage drop, you can make sure to drive the IGBT at its maximum switching capacity, without the risk of destroying it by having a voltage on that gate that is too high.
They are called Kelvin point, like on this device: datasheet.
answered 48 mins ago
DamienDamien
2,4561315
$endgroup$
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
1
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
1
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
add a comment |
$begingroup$
These are used for measurement purpse and driver reference. Due to the high current and high transients you can have already quite noticeable voltage difference between the auxilliary emitter and the power emitter.
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
$endgroup$
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
1
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
add a comment |
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2 Answers
2
active
oldest
votes
2 Answers
2
active
oldest
votes
active
oldest
votes
active
oldest
votes
$begingroup$
To measure the voltage at the junction without the lead voltage drop.
This is used so that the gate voltage can better be controlled.
Since IGB can have pretty high current, even a small lead resistance can cause significant voltage drop, you can make sure to drive the IGBT at its maximum switching capacity, without the risk of destroying it by having a voltage on that gate that is too high.
They are called Kelvin point, like on this device: datasheet.
answered 48 mins ago
DamienDamien
2,4561315
$endgroup$
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
1
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
1
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
add a comment |
$begingroup$
To measure the voltage at the junction without the lead voltage drop.
This is used so that the gate voltage can better be controlled.
Since IGB can have pretty high current, even a small lead resistance can cause significant voltage drop, you can make sure to drive the IGBT at its maximum switching capacity, without the risk of destroying it by having a voltage on that gate that is too high.
They are called Kelvin point, like on this device: datasheet.
answered 48 mins ago
DamienDamien
2,4561315
$endgroup$
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
1
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
1
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
add a comment |
$begingroup$
To measure the voltage at the junction without the lead voltage drop.
This is used so that the gate voltage can better be controlled.
Since IGB can have pretty high current, even a small lead resistance can cause significant voltage drop, you can make sure to drive the IGBT at its maximum switching capacity, without the risk of destroying it by having a voltage on that gate that is too high.
They are called Kelvin point, like on this device: datasheet.
answered 48 mins ago
DamienDamien
2,4561315
$endgroup$
To measure the voltage at the junction without the lead voltage drop.
This is used so that the gate voltage can better be controlled.
Since IGB can have pretty high current, even a small lead resistance can cause significant voltage drop, you can make sure to drive the IGBT at its maximum switching capacity, without the risk of destroying it by having a voltage on that gate that is too high.
They are called Kelvin point, like on this device: datasheet.
answered 48 mins ago
DamienDamien
2,4561315
edited 42 mins ago
answered 48 mins ago
DamienDamien
2,4561315
answered 48 mins ago
DamienDamien
2,4561315
answered 48 mins ago
DamienDamien
2,4561315
2,4561315
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
1
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
1
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
add a comment |
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
1
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
1
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
$begingroup$
As I understand, measuring emitter voltage helps us in setting the Vge voltage to turn on-off IGBT, right?
$endgroup$
– litvinik
46 mins ago
1
1
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Yes, since IGBT can have pretty high current, even a small lead resistance can have a significant voltage drop. With advanced control you can make sure you apply the maximum gate voltage to switch properly without risking to destroy it.
$endgroup$
– Damien
41 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
$begingroup$
Thank you so much! You helped me to understand the functionality of IGBT module
$endgroup$
– litvinik
38 mins ago
1
1
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
Welcome, I'd like to add as well that since it's a module connected with leads, you may have long leads and thus even increasing this effect.
$endgroup$
– Damien
36 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
$begingroup$
I remembered, that we studied the four-wire measuring, so I guess it is the same situation here with IGBTs
$endgroup$
– litvinik
34 mins ago
add a comment |
$begingroup$
These are used for measurement purpse and driver reference. Due to the high current and high transients you can have already quite noticeable voltage difference between the auxilliary emitter and the power emitter.
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
$endgroup$
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
1
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
add a comment |
$begingroup$
These are used for measurement purpse and driver reference. Due to the high current and high transients you can have already quite noticeable voltage difference between the auxilliary emitter and the power emitter.
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
$endgroup$
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
1
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
add a comment |
$begingroup$
These are used for measurement purpse and driver reference. Due to the high current and high transients you can have already quite noticeable voltage difference between the auxilliary emitter and the power emitter.
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
$endgroup$
These are used for measurement purpse and driver reference. Due to the high current and high transients you can have already quite noticeable voltage difference between the auxilliary emitter and the power emitter.
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
answered 50 mins ago
HumpawumpaHumpawumpa
1,150214
1,150214
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
1
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
add a comment |
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
1
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
$begingroup$
So auxiliary emitter is taken as the "real" emitter of IGBT, because power emitter pin has different potential due to the high currents, voltages and the resistance of the wire?
$endgroup$
– litvinik
44 mins ago
1
1
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
$begingroup$
It's taken as reference point for measurement and gate control, don't know if it's right to call it "real" emitter.
$endgroup$
– Humpawumpa
42 mins ago
add a comment |
litvinik is a new contributor. Be nice, and check out our Code of Conduct.
litvinik is a new contributor. Be nice, and check out our Code of Conduct.
litvinik is a new contributor. Be nice, and check out our Code of Conduct.
litvinik is a new contributor. Be nice, and check out our Code of Conduct.
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